BUK462-100A Todos los transistores

 ..1. Size:60K  philips
 buk462-100a 2.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK462-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 11 A The device is intended for use in Ptot Total power dissipation 60

 7.1. Size:56K  philips
 buk462-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK462-60A mGENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 15 A The device is intended for use in Ptot Total power dissipation 60

 9.1. Size:57K  philips
 buk463-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK463 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor

 9.2. Size:57K  philips
 buk465-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125

 9.3. Size:57K  philips
 buk465-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125

 9.4. Size:60K  philips
 buk464-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK464-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power dissipation 90

 9.5. Size:59K  philips
 buk465-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A

 9.6. Size:57K  philips
 buk466-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK466-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 60 V applications. ID Drain current (DC) 52 A The device is intended for use in Ptot Total power dissipation 150 W

 9.7. Size:74K  philips
 buk465-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125

 9.8. Size:53K  philips
 buk466-200a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK466-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 19 A The device is intended for use in Ptot Total power dissipat

 9.9. Size:60K  philips
 buk463-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK463-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount Drain-source voltage 100 V applications. VDS Drain current (DC) 14 A The device is intended for use in ID Total power dissipation 75 W Sw

 9.10. Size:54K  philips
 buk464-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125

 9.11. Size:55K  philips
 buk466-100a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK466-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 34 A The device is intended for use in Ptot Total power dissipation 150