BUK462-100A - описание и поиск аналогов

Philips Semiconductors Product specification PowerMOS transistor BUK462-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 11 A The device is intended for use in Ptot Total power dissipation 60

Philips Semiconductors Product specification PowerMOS transistor BUK462-60A mGENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 15 A The device is intended for use in Ptot Total power dissipation 60

Philips Semiconductors Product Specification PowerMOS transistor BUK463-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK463 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 22 20 A (SMPS), motor

Philips Semiconductors Product specification PowerMOS transistor BUK465-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 14 A The device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK465-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 26 A The device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK464-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 200 V applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power dissipation 90

Philips Semiconductors Product specification PowerMOS transistor BUK465-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage -60A applications. ID Drain current (DC) 60 V The device is intended for use in Ptot Total power dissipation 41 A

Philips Semiconductors Product specification PowerMOS transistor BUK466-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 60 V applications. ID Drain current (DC) 52 A The device is intended for use in Ptot Total power dissipation 150 W

Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 43 A The device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK466-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 19 A The device is intended for use in Ptot Total power dissipat

Philips Semiconductors Product specification PowerMOS transistor BUK463-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount Drain-source voltage 100 V applications. VDS Drain current (DC) 14 A The device is intended for use in ID Total power dissipation 75 W Sw

Philips Semiconductors Product specification PowerMOS transistor BUK464-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125

Philips Semiconductors Product specification PowerMOS transistor BUK466-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface mount VDS Drain-source voltage 100 V applications. ID Drain current (DC) 34 A The device is intended for use in Ptot Total power dissipation 150