TPC8408 Todos los transistores

 

TPC8408 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8408
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: SOP8
 

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TPC8408 Datasheet (PDF)

 ..1. Size:376K  toshiba
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TPC8408

TPC8408MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8408TPC8408TPC8408TPC84081. Applications1. Applications1. Applications1. Applications Mobile Equipments Motor Drivers2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistanceP-channel RDS(ON) =

 8.1. Size:376K  toshiba
tpc8407.pdf pdf_icon

TPC8408

TPC8407MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8407TPC8407TPC8407TPC84071. Applications1. Applications1. Applications1. Applications Motor Drivers CCFL Inverters Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistance

 8.2. Size:303K  toshiba
tpc8406-h.pdf pdf_icon

TPC8408

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-ChannelN-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DCDC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi

 8.3. Size:484K  toshiba
tpc8401.pdf pdf_icon

TPC8408

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Low drain-source ON resistance : P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel

Otros transistores... TPC8129 , TPC8132 , TPC8133 , TPC8134 , TPC8221-H , TPC8223-H , TPC8224-H , TPC8407 , IRF640N , TPC8A03-H , TPC8A04-H , TPC8A05-H , TPC8A06-H , TPCA8006-H , TPCA8008-H , TPCA8010-H , TPCA8011-H .

History: S80N10RN | IXTH12N120

 

 
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