TPC8408. Аналоги и основные параметры

Наименование производителя: TPC8408

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm

Тип корпуса: SOP8

Аналог (замена) для TPC8408

- подборⓘ MOSFET транзистора по параметрам

 

TPC8408 даташит

 ..1. Size:376K  toshiba
 tpc8408.pdf pdf_icon

TPC8408

TPC8408 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS -H) TPC8408 TPC8408 TPC8408 TPC8408 1. Applications 1. Applications 1. Applications 1. Applications Mobile Equipments Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance P-channel RDS(ON) =

 8.1. Size:376K  toshiba
 tpc8407.pdf pdf_icon

TPC8408

TPC8407 MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS -H) TPC8407 TPC8407 TPC8407 TPC8407 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers CCFL Inverters Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance

 8.2. Size:303K  toshiba
 tpc8406-h.pdf pdf_icon

TPC8408

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel N-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DC DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi

 8.3. Size:484K  toshiba
 tpc8401.pdf pdf_icon

TPC8408

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit mm Notebook PCs Low drain-source ON resistance P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance P Channel Yfs = 7 S (typ.) N Channel

ПОКАЗАТЬ ЕЩЁ

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