Справочник MOSFET. TPC8408

 

TPC8408 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8408
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8408

 

 

TPC8408 Datasheet (PDF)

 ..1. Size:376K  toshiba
 tpc8408.pdf

TPC8408 TPC8408

TPC8408MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8408TPC8408TPC8408TPC84081. Applications1. Applications1. Applications1. Applications Mobile Equipments Motor Drivers2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistanceP-channel RDS(ON) =

 8.1. Size:376K  toshiba
 tpc8407.pdf

TPC8408 TPC8408

TPC8407MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8407TPC8407TPC8407TPC84071. Applications1. Applications1. Applications1. Applications Motor Drivers CCFL Inverters Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistance

 8.2. Size:303K  toshiba
 tpc8406-h.pdf

TPC8408 TPC8408

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-ChannelN-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DCDC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi

 8.3. Size:484K  toshiba
 tpc8401.pdf

TPC8408 TPC8408

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Low drain-source ON resistance : P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel

 8.4. Size:349K  toshiba
 tpc8404.pdf

TPC8408 TPC8408

TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel -MOSV/N Channel -MOSV) TPC8404 Motor Dreive Unit: mmSwitching Regulator Applications Low drain-source ON resistance: P Channel RDS (ON) = 1.85 (typ.) N Channel RDS (ON) = 1.2 (typ.) High forward transfer admittance: P Channel |Yfs| = 1.1 S (typ.) N Channel |Yfs| = 1.3 S (ty

 8.5. Size:288K  toshiba
 tpc8405.pdf

TPC8408 TPC8408

TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U-MOS IV/N Channel U-MOS III) TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ.) N Channel RDS (ON) = 20 m (typ.) High forward transfer admittance : P Cha

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