TPC8A03-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8A03-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.6 nS

Cossⓘ - Capacitancia de salida: 610 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: SOP8

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TPC8A03-H datasheet

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 tpc8a03-h.pdf pdf_icon

TPC8A03-H

TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 8.4 nC (t

 8.1. Size:279K  toshiba
 tpc8a07-h.pdf pdf_icon

TPC8A03-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.2. Size:316K  toshiba
 tpc8a01.pdf pdf_icon

TPC8A03-H

TPC8A01 Q1 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) Q2 TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) TPC8A01 Unit mm DC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage V =0.6V(Max.) DSF Small footprint due to

 8.3. Size:217K  toshiba
 tpc8a04-h.pdf pdf_icon

TPC8A03-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 13 nC (ty

MOSTRAR MÁS

Otros transistores... TPC8132, TPC8133, TPC8134, TPC8221-H, TPC8223-H, TPC8224-H, TPC8407, TPC8408, IRF640N, TPC8A04-H, TPC8A05-H, TPC8A06-H, TPCA8006-H, TPCA8008-H, TPCA8010-H, TPCA8011-H, TPCA8024