Справочник MOSFET. TPC8A03-H

 

TPC8A03-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8A03-H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.6 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8A03-H

 

 

TPC8A03-H Datasheet (PDF)

 ..1. Size:213K  toshiba
 tpc8a03-h.pdf

TPC8A03-H TPC8A03-H

TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 8.4 nC (t

 8.1. Size:279K  toshiba
 tpc8a07-h.pdf

TPC8A03-H TPC8A03-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.2. Size:316K  toshiba
 tpc8a01.pdf

TPC8A03-H TPC8A03-H

TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) TPC8A01 Unit: mmDC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: V =0.6V(Max.) DSF Small footprint due to

 8.3. Size:217K  toshiba
 tpc8a04-h.pdf

TPC8A03-H TPC8A03-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 13 nC (ty

 8.4. Size:234K  toshiba
 tpc8a06-h.pdf

TPC8A03-H TPC8A03-H

TPC8A06-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A06-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 4.5

 8.5. Size:255K  toshiba
 tpc8a02-h.pdf

TPC8A03-H TPC8A03-H

TPC8A02-H OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPC8A02-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Built-in Schottky barrier diode Low forward voltage: V = 0.6V (max) DSF High-speed switching. Small gate

 8.6. Size:231K  toshiba
 tpc8a05-h.pdf

TPC8A03-H TPC8A03-H

TPC8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 3.7

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top