TPCA8045-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8045-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 46 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
Carga de la puerta (Qg): 47 nC
Tiempo de subida (tr): 4.6 nS
Conductancia de drenaje-sustrato (Cd): 950 pF
Resistencia entre drenaje y fuente RDS(on): 0.0036 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de MOSFET TPCA8045-H
TPCA8045-H Datasheet (PDF)
tpca8045-h.pdf
TPCA8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8045-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 23 nC (
tpca8047-h.pdf
TPCA8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8047-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 13 nC (typ.) 1A
tpca8042.pdf
TPCA8042 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCA8042 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) 40.595 1 High forwa
tpca8040-h.pdf
TPCA8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8040-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 5.7 nC
tpca8049-h.pdf
TPCA8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8049-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 13 nC (typ.) 1A
tpca8046-h.pdf
TPCA8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8046-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 15 nC (typ.) 1A
tpca8048-h.pdf
TPCA8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8048-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 19 nC (typ.) 1A
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C