TPCA8045-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCA8045-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4.6 ns
Cossⓘ - Выходная емкость: 950 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: SOP-ADVANCE
- подбор MOSFET транзистора по параметрам
TPCA8045-H Datasheet (PDF)
tpca8045-h.pdf

TPCA8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8045-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 23 nC (
tpca8047-h.pdf

TPCA8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8047-H Switching Regulator Applications Unit: mmMotor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 13 nC (typ.) 1A
tpca8042.pdf

TPCA8042 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCA8042 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) 40.595 1 High forwa
tpca8040-h.pdf

TPCA8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8040-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 5.7 nC
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQP1N50 | NCEP065N10GU
History: FQP1N50 | NCEP065N10GU



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet | 2sa726 transistor