TPCA8062-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8062-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.8 nS
Cossⓘ - Capacitancia de salida: 430 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Paquete / Cubierta: SOP-ADVANCE
- Selección de transistores por parámetros
TPCA8062-H Datasheet (PDF)
tpca8062-h.pdf

TPCA8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8062-HTPCA8062-HTPCA8062-HTPCA8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate ch
tpca8063-h.pdf

TPCA8063-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8063-HTPCA8063-HTPCA8063-HTPCA8063-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.9 nC (typ.)(
tpca8060-h.pdf

TPCA8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8060-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 17nC (t
tpca8068-h.pdf

TPCA8068-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8068-HTPCA8068-HTPCA8068-HTPCA8068-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.3 nC (typ.)(
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTB6410AN | SDF1NA60



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