TPCA8082 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCA8082
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 41 nC
   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: SOP-ADVANCE

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TPCA8082 Datasheet (PDF)

..1. Size:229K toshiba
tpca8082.pdf

TPCA8082MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8082TPCA8082TPCA8082TPCA80821. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.9 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS = 10 A (max)

7.1. Size:233K toshiba
tpca8083.pdf

TPCA8083MOSFETs Silicon N-channel MOS (U-MOS)TPCA8083TPCA8083TPCA8083TPCA80831. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.2. Size:257K toshiba
tpca8087.pdf

TPCA8087MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8087TPCA8087TPCA8087TPCA80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.5 m (typ.) (VGS = 10 V)(3) Low leakage c

7.3. Size:235K toshiba
tpca8086.pdf

TPCA8086MOSFETs Silicon N-channel MOS (U-MOS)TPCA8086TPCA8086TPCA8086TPCA80861. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.0 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.4. Size:259K toshiba
tpca8080.pdf

TPCA8080MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8080TPCA8080TPCA8080TPCA80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.0 m (typ.) (VGS = 10 V)(3) Low leakage c

7.5. Size:234K toshiba
tpca8085.pdf

TPCA8085MOSFETs Silicon N-channel MOS (U-MOS)TPCA8085TPCA8085TPCA8085TPCA80851. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 4.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.6. Size:234K toshiba
tpca8084.pdf

TPCA8084MOSFETs Silicon N-channel MOS (U-MOS)TPCA8084TPCA8084TPCA8084TPCA80841. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 4.2 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =

7.7. Size:233K toshiba
tpca8081.pdf

TPCA8081MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8081TPCA8081TPCA8081TPCA80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.3 m (typ.) (VGS = 10 V)(3) Low leakage c

7.8. Size:228K toshiba
tpca8088.pdf

TPCA8088MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8088TPCA8088TPCA8088TPCA80881. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage c

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