TPCA8082
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCA8082
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41
nC
trⓘ - Rise Time: 3.3
nS
Cossⓘ -
Output Capacitance: 530
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038
Ohm
Package:
SOP-ADVANCE
TPCA8082
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCA8082
Datasheet (PDF)
..1. Size:229K toshiba
tpca8082.pdf 
TPCA8082MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8082TPCA8082TPCA8082TPCA80821. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.9 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS = 10 A (max)
7.1. Size:233K toshiba
tpca8083.pdf
TPCA8083MOSFETs Silicon N-channel MOS (U-MOS)TPCA8083TPCA8083TPCA8083TPCA80831. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =
7.2. Size:257K toshiba
tpca8087.pdf
TPCA8087MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8087TPCA8087TPCA8087TPCA80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.5 m (typ.) (VGS = 10 V)(3) Low leakage c
7.3. Size:235K toshiba
tpca8086.pdf
TPCA8086MOSFETs Silicon N-channel MOS (U-MOS)TPCA8086TPCA8086TPCA8086TPCA80861. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.0 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =
7.4. Size:259K toshiba
tpca8080.pdf
TPCA8080MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8080TPCA8080TPCA8080TPCA80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.0 m (typ.) (VGS = 10 V)(3) Low leakage c
7.5. Size:234K toshiba
tpca8085.pdf
TPCA8085MOSFETs Silicon N-channel MOS (U-MOS)TPCA8085TPCA8085TPCA8085TPCA80851. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 4.6 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =
7.6. Size:234K toshiba
tpca8084.pdf
TPCA8084MOSFETs Silicon N-channel MOS (U-MOS)TPCA8084TPCA8084TPCA8084TPCA80841. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 4.2 m (typ.) (VGS = 10 V)(3) Low leakage current: IDSS =
7.7. Size:233K toshiba
tpca8081.pdf
TPCA8081MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8081TPCA8081TPCA8081TPCA80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.3 m (typ.) (VGS = 10 V)(3) Low leakage c
7.8. Size:228K toshiba
tpca8088.pdf
TPCA8088MOSFETs Silicon N-Channel MOS (U-MOS)TPCA8088TPCA8088TPCA8088TPCA80881. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage c
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