TPCA8107-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8107-H
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de MOSFET TPCA8107-H
TPCA8107-H Datasheet (PDF)
tpca8107-h.pdf
TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8107-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 CCFL Inverter Applications 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595
tpca8102.pdf
TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8102 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.40.11.270.05 M APortable Equipment Applications 8 50.150.05 Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5m (typ.) 41 0.595 High forward transfer
tpca8108.pdf
TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8108 High-Side Switching Applications Motor Drive Applications Unit: mm 0.40.11.270.50.10.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.7 m (typ.) High forward transfer admittance: |Yfs| = 41S (typ.) 0.150.05
tpca8106.pdf
TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8106 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.) 40.595 1 (VGS= -10V
tpca8109.pdf
TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8109 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to small and thin package 0.15 0.05 Low drain-source ON-resistance: RDS (ON) = 7 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -
tpca8103.pdf
TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8103 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.40.11.270.05 M APortable Equipment Applications 8 50.150.05 Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) 41 0.595 High forward transfe
tpca8104.pdf
TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 11 m (typ.) 0.150.05 High forward transfer admittance:|Y | = 50 S (ty
tpca8105.pdf
TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A 8 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 23 m (typ.) 0.150.05 High forward transfer admittance :|Y | = 14 S (typ.)
tpca8103.pdf
TPCA8103www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G273645
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918