TPCA8131 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPCA8131MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8131TPCA8131TPCA8131TPCA81311. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 12.4 m (typ.) (VGS = -10 V)(3) Low leakag

TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8102 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.40.11.270.05 M APortable Equipment Applications 8 50.150.05 Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5m (typ.) 41 0.595 High forward transfer

TPCA8124MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8124TPCA8124TPCA8124TPCA81241. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.1 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8108 High-Side Switching Applications Motor Drive Applications Unit: mm 0.40.11.270.50.10.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.7 m (typ.) High forward transfer admittance: |Yfs| = 41S (typ.) 0.150.05

TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8106 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.) 40.595 1 (VGS= -10V

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8109 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to small and thin package 0.15 0.05 Low drain-source ON-resistance: RDS (ON) = 7 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

TPCA8125MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8125TPCA8125TPCA8125TPCA81251. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 19.6 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCA8103 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.40.11.270.05 M APortable Equipment Applications 8 50.150.05 Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) 41 0.595 High forward transfe

TPCA8123MOSFET PMOS (U-MOS)TPCA8123TPCA8123TPCA8123TPCA81231. 1. 1. 1. 2. 2. 2. 2. (1) , (2) : RDS(ON) = 8.5 m () (VGS = -10 V)(3)

TPCA8120MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8120TPCA8120TPCA8120TPCA81201. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (V

TPCA8122MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8122TPCA8122TPCA8122TPCA81221. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 11 m (typ.) 0.150.05 High forward transfer admittance:|Y | = 50 S (ty

TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8107-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 CCFL Inverter Applications 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595

TPCA8121MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8121TPCA8121TPCA8121TPCA81211. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (VGS = -10 V)(3) Low leakage

TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A 8 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 23 m (typ.) 0.150.05 High forward transfer admittance :|Y | = 14 S (typ.)

TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 3.7 m (typ.) 0.15 0.05 Low leakage current : IDSS = -10 A (max) (

TPCA8103www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G273645