TPCA8131 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8131
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6.8 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Encapsulados: SOP-ADVANCE
Búsqueda de reemplazo de TPCA8131 MOSFET
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TPCA8131 datasheet
..1. Size:269K toshiba
tpca8131.pdf 
TPCA8131 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8131 TPCA8131 TPCA8131 TPCA8131 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 12.4 m (typ.) (VGS = -10 V) (3) Low leakag
8.1. Size:178K toshiba
tpca8102.pdf
TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8102 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.05 M A Portable Equipment Applications 8 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 4.5m (typ.) 4 1 0.595 High forward transfer
8.2. Size:240K toshiba
tpca8124.pdf
TPCA8124 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8124 TPCA8124 TPCA8124 TPCA8124 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 8.1 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS
8.3. Size:133K toshiba
tpca8108.pdf
TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8108 High-Side Switching Applications Motor Drive Applications Unit mm 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.7 m (typ.) High forward transfer admittance Yfs = 41S (typ.) 0.15 0.05
8.4. Size:218K toshiba
tpca8106.pdf
TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8106 Lithium Ion Battery Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.9 m (typ.) 4 0.595 1 (VGS= -10V
8.5. Size:231K toshiba
tpca8109.pdf
TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8109 Lithium Ion Battery Applications Unit mm Power Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to small and thin package 0.15 0.05 Low drain-source ON-resistance RDS (ON) = 7 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -
8.6. Size:240K toshiba
tpca8125.pdf
TPCA8125 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8125 TPCA8125 TPCA8125 TPCA8125 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 19.6 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS
8.7. Size:248K toshiba
tpca8103.pdf
TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8103 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.05 M A Portable Equipment Applications 8 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) 4 1 0.595 High forward transfe
8.8. Size:357K toshiba
tpca8123.pdf
TPCA8123 MOSFET P MOS (U-MOS ) TPCA8123 TPCA8123 TPCA8123 TPCA8123 1. 1. 1. 1. 2. 2. 2. 2. (1) , (2) RDS(ON) = 8.5 m ( ) (VGS = -10 V) (3)
8.9. Size:231K toshiba
tpca8120.pdf
TPCA8120 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8120 TPCA8120 TPCA8120 TPCA8120 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.4 m (typ.) (V
8.10. Size:238K toshiba
tpca8122.pdf
TPCA8122 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8122 TPCA8122 TPCA8122 TPCA8122 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 3.8 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS
8.11. Size:231K toshiba
tpca8104.pdf
TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Unit mm Portable Equipment Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 11 m (typ.) 0.15 0.05 High forward transfer admittance Y = 50 S (ty
8.12. Size:156K toshiba
tpca8107-h.pdf
TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8107-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 CCFL Inverter Applications 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595
8.13. Size:256K toshiba
tpca8121.pdf
TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8121 TPCA8121 TPCA8121 TPCA8121 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 2.4 m (typ.) (VGS = -10 V) (3) Low leakage
8.14. Size:284K toshiba
tpca8105.pdf
TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Unit mm Portable Equipment Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to compact and slim package Low drain-source ON resistance RDS (ON) = 23 m (typ.) 0.15 0.05 High forward transfer admittance Y = 14 S (typ.)
8.15. Size:240K toshiba
tpca8128.pdf
TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit mm Power Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance RDS (ON) = 3.7 m (typ.) 0.15 0.05 Low leakage current IDSS = -10 A (max) (
8.16. Size:1064K cn vbsemi
tpca8103.pdf
TPCA8103 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.004 at VGS = - 10 V - 120 COMPLIANT - 30 130 nC 100 % Rg Tested 0.006 at VGS = - 4.5 V - 100 APPLICATIONS Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 G 2 7 3 6 4 5
Otros transistores... TPCA8088, TPCA8104, TPCA8105, TPCA8107-H, TPCA8108, TPCA8109, TPCA8120, TPCA8128, 4N60, TPCA8A02-H, TPCA8A04-H, TPCA8A05-H, TPCA8A08-H, TPCA8A09-H, TPCA8A10-H, TPCA8A11-H, TPCC8007
