TPCA8131 - описание и поиск аналогов

 ..1. Size:269K  toshiba
 tpca8131.pdf 

TPCA8131 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8131 TPCA8131 TPCA8131 TPCA8131 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 12.4 m (typ.) (VGS = -10 V) (3) Low leakag

 8.1. Size:178K  toshiba
 tpca8102.pdf 

TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8102 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.05 M A Portable Equipment Applications 8 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 4.5m (typ.) 4 1 0.595 High forward transfer

 8.2. Size:240K  toshiba
 tpca8124.pdf 

TPCA8124 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8124 TPCA8124 TPCA8124 TPCA8124 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 8.1 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS

 8.3. Size:133K  toshiba
 tpca8108.pdf 

TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8108 High-Side Switching Applications Motor Drive Applications Unit mm 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.7 m (typ.) High forward transfer admittance Yfs = 41S (typ.) 0.15 0.05

 8.4. Size:218K  toshiba
 tpca8106.pdf 

TPCA8106 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8106 Lithium Ion Battery Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 2.9 m (typ.) 4 0.595 1 (VGS= -10V

 8.5. Size:231K  toshiba
 tpca8109.pdf 

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8109 Lithium Ion Battery Applications Unit mm Power Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to small and thin package 0.15 0.05 Low drain-source ON-resistance RDS (ON) = 7 m (typ.) Low leakage current IDSS = -10 A (max) (VDS = -

 8.6. Size:240K  toshiba
 tpca8125.pdf 

TPCA8125 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8125 TPCA8125 TPCA8125 TPCA8125 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 19.6 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS

 8.7. Size:248K  toshiba
 tpca8103.pdf 

TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8103 Lithium Ion Battery Applications Unit mm Notebook PC Applications 0.4 0.1 1.27 0.05 M A Portable Equipment Applications 8 5 0.15 0.05 Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) 4 1 0.595 High forward transfe

 8.8. Size:357K  toshiba
 tpca8123.pdf 

TPCA8123 MOSFET P MOS (U-MOS ) TPCA8123 TPCA8123 TPCA8123 TPCA8123 1. 1. 1. 1. 2. 2. 2. 2. (1) , (2) RDS(ON) = 8.5 m ( ) (VGS = -10 V) (3)

 8.9. Size:231K  toshiba
 tpca8120.pdf 

TPCA8120 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8120 TPCA8120 TPCA8120 TPCA8120 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.4 m (typ.) (V

 8.10. Size:238K  toshiba
 tpca8122.pdf 

TPCA8122 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8122 TPCA8122 TPCA8122 TPCA8122 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 3.8 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS

 8.11. Size:231K  toshiba
 tpca8104.pdf 

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Unit mm Portable Equipment Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 11 m (typ.) 0.15 0.05 High forward transfer admittance Y = 50 S (ty

 8.12. Size:156K  toshiba
 tpca8107-h.pdf 

TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8107-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 CCFL Inverter Applications 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595

 8.13. Size:256K  toshiba
 tpca8121.pdf 

TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8121 TPCA8121 TPCA8121 TPCA8121 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 2.4 m (typ.) (VGS = -10 V) (3) Low leakage

 8.14. Size:284K  toshiba
 tpca8105.pdf 

TPCA8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Unit mm Portable Equipment Applications 0.4 0.1 1.27 0.5 0.1 0.05 M A 8 5 Small footprint due to compact and slim package Low drain-source ON resistance RDS (ON) = 23 m (typ.) 0.15 0.05 High forward transfer admittance Y = 14 S (typ.)

 8.15. Size:240K  toshiba
 tpca8128.pdf 

TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit mm Power Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance RDS (ON) = 3.7 m (typ.) 0.15 0.05 Low leakage current IDSS = -10 A (max) (

 8.16. Size:1064K  cn vbsemi
 tpca8103.pdf 

TPCA8103 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.004 at VGS = - 10 V - 120 COMPLIANT - 30 130 nC 100 % Rg Tested 0.006 at VGS = - 4.5 V - 100 APPLICATIONS Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 G 2 7 3 6 4 5