TPCA8A10-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCA8A10-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 810 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: SOP-ADVANCE

Búsqueda de reemplazo de MOSFET TPCA8A10-H

TPCA8A10-H Datasheet (PDF)

..1. Size:252K toshiba
tpca8a10-h.pdf

TPCA8A10-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A10-HTPCA8A10-HTPCA8A10-HTPCA8A10-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

7.1. Size:252K toshiba
tpca8a11-h.pdf

TPCA8A11-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A11-HTPCA8A11-HTPCA8A11-HTPCA8A11-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

8.1. Size:214K toshiba
tpca8a01-h.pdf

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6

8.2. Size:253K toshiba
tpca8a09-h.pdf

TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

8.3. Size:231K toshiba
tpca8a04-h.pdf

TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.15 0.05 High-sp

8.4. Size:223K toshiba
tpca8a05-h.pdf

TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High

8.5. Size:226K toshiba
tpca8a08-h.pdf

TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High

8.6. Size:209K toshiba
tpca8a02-h.pdf

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.150.05 Hi

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