Справочник MOSFET. TPCA8A10-H

 

TPCA8A10-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCA8A10-H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 58 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 29 nC
   trⓘ - Время нарастания: 3.9 ns
   Cossⓘ - Выходная емкость: 810 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: SOP-ADVANCE

 Аналог (замена) для TPCA8A10-H

 

 

TPCA8A10-H Datasheet (PDF)

 ..1. Size:252K  toshiba
tpca8a10-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A10-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A10-HTPCA8A10-HTPCA8A10-HTPCA8A10-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 7.1. Size:252K  toshiba
tpca8a11-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A11-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A11-HTPCA8A11-HTPCA8A11-HTPCA8A11-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 8.1. Size:214K  toshiba
tpca8a01-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6

 8.2. Size:253K  toshiba
tpca8a09-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 8.3. Size:231K  toshiba
tpca8a04-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.15 0.05 High-sp

 8.4. Size:223K  toshiba
tpca8a05-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High

 8.5. Size:226K  toshiba
tpca8a08-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High

 8.6. Size:209K  toshiba
tpca8a02-h.pdf

TPCA8A10-H
TPCA8A10-H

TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.150.05 Hi

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top