TPCA8A10-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCA8A10-H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 58 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 3.9 ns
Cossⓘ - Выходная емкость: 810 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: SOP-ADVANCE
Аналог (замена) для TPCA8A10-H
TPCA8A10-H Datasheet (PDF)
tpca8a10-h.pdf

TPCA8A10-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A10-HTPCA8A10-HTPCA8A10-HTPCA8A10-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
tpca8a11-h.pdf

TPCA8A11-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A11-HTPCA8A11-HTPCA8A11-HTPCA8A11-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
tpca8a01-h.pdf

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6
tpca8a09-h.pdf

TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
Другие MOSFET... TPCA8120 , TPCA8128 , TPCA8131 , TPCA8A02-H , TPCA8A04-H , TPCA8A05-H , TPCA8A08-H , TPCA8A09-H , SKD502T , TPCA8A11-H , TPCC8007 , TPCC8008 , TPCC8009 , TPCC8061-H , TPCC8062-H , TPCC8064-H , TPCC8065-H .
History: CJK8804 | 25N10G-TF2-T | LSE60R105HF | BF1118R | BUK762R0-40C
History: CJK8804 | 25N10G-TF2-T | LSE60R105HF | BF1118R | BUK762R0-40C



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