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TPCA8A11-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8A11-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.4 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: SOP-ADVANCE
 

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TPCA8A11-H Datasheet (PDF)

 ..1. Size:252K  toshiba
 tpca8a11-h.pdf pdf_icon

TPCA8A11-H

TPCA8A11-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A11-HTPCA8A11-HTPCA8A11-HTPCA8A11-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 7.1. Size:252K  toshiba
 tpca8a10-h.pdf pdf_icon

TPCA8A11-H

TPCA8A10-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A10-HTPCA8A10-HTPCA8A10-HTPCA8A10-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

 8.1. Size:214K  toshiba
 tpca8a01-h.pdf pdf_icon

TPCA8A11-H

TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6

 8.2. Size:253K  toshiba
 tpca8a09-h.pdf pdf_icon

TPCA8A11-H

TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V

MOSTRAR MÁS

Otros transistores... TPCA8128 , TPCA8131 , TPCA8A02-H , TPCA8A04-H , TPCA8A05-H , TPCA8A08-H , TPCA8A09-H , TPCA8A10-H , 2N60 , TPCC8007 , TPCC8008 , TPCC8009 , TPCC8061-H , TPCC8062-H , TPCC8064-H , TPCC8065-H , TPCC8066-H .

History: IPB009N03L | ELM13401CA | FL6L52010L | DH500P06R | TSM2301ACX | FQU7P20TU | HM3710

 

 
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