TPCA8A11-H MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCA8A11-H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: SOP-ADVANCE
TPCA8A11-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCA8A11-H Datasheet (PDF)
tpca8a11-h.pdf
TPCA8A11-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A11-HTPCA8A11-HTPCA8A11-HTPCA8A11-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
tpca8a10-h.pdf
TPCA8A10-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A10-HTPCA8A10-HTPCA8A10-HTPCA8A10-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
tpca8a01-h.pdf
TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPCA8A01-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A58Portable Equipment Applications Built-in schottky barrier diode 0.150.05Low forward voltage: VDSF = -0.6
tpca8a09-h.pdf
TPCA8A09-HMOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)TPCA8A09-HTPCA8A09-HTPCA8A09-HTPCA8A09-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Built-in a schottky barrier diodeLow forward voltage: VDSF = -0.6 V
tpca8a04-h.pdf
TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 1.27 0.4 0.1 0.05 M A 8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.15 0.05 High-sp
tpca8a05-h.pdf
TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High
tpca8a08-h.pdf
TPCA8A08-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A08-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.18 0.05 M A Portable Equipment Applications 5 Built-in a schottky barrier diode 0.15 0.05Low forward voltage: V = 0.6 V (max) DSF High
tpca8a02-h.pdf
TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A02-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.40.11.270.50.10.05 M A8 5 Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) 0.150.05 Hi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FRS240D
History: FRS240D
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