TPCC8008 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8008
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.9 nS
Cossⓘ - Capacitancia de salida: 470 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
Encapsulados: TSON-ADVANCE
Búsqueda de reemplazo de TPCC8008 MOSFET
- Selecciónⓘ de transistores por parámetros
TPCC8008 datasheet
tpcc8008.pdf
TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8008 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.
tpcc8009.pdf
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V)
tpcc8007.pdf
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage
tpcc8002-h.pdf
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6
Otros transistores... TPCA8A02-H, TPCA8A04-H, TPCA8A05-H, TPCA8A08-H, TPCA8A09-H, TPCA8A10-H, TPCA8A11-H, TPCC8007, 18N50, TPCC8009, TPCC8061-H, TPCC8062-H, TPCC8064-H, TPCC8065-H, TPCC8066-H, TPCC8067-H, TPCC8068-H
History: TPCC8074
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
Popular searches
3dd15d transistor | pa110bda | 2sb1243 | a1123 transistor | skd502t datasheet | svf7n65f | 2sc1419 datasheet | 2n4249 datasheet
