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TPCC8008 Specs and Replacement


   Type Designator: TPCC8008
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.9 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TSON-ADVANCE
 

 TPCC8008 substitution

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TPCC8008 Specs

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TPCC8008

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8008 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.... See More ⇒

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 tpcc8009.pdf pdf_icon

TPCC8008

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) ... See More ⇒

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 tpcc8007.pdf pdf_icon

TPCC8008

TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage ... See More ⇒

 7.3. Size:176K  toshiba
 tpcc8002-h.pdf pdf_icon

TPCC8008

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 ... See More ⇒

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Detailed specifications: TPCA8A02-H , TPCA8A04-H , TPCA8A05-H , TPCA8A08-H , TPCA8A09-H , TPCA8A10-H , TPCA8A11-H , TPCC8007 , 18N50 , TPCC8009 , TPCC8061-H , TPCC8062-H , TPCC8064-H , TPCC8065-H , TPCC8066-H , TPCC8067-H , TPCC8068-H .

Keywords - TPCC8008 MOSFET specs

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