TPCC8065-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8065-H
Código: 8065H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 18 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 9.9 nC
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0114 Ohm
Paquete / Cubierta: TSON-ADVANCE
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Otros transistores... TPCA8A10-H , TPCA8A11-H , TPCC8007 , TPCC8008 , TPCC8009 , TPCC8061-H , TPCC8062-H , TPCC8064-H , 10N65 , TPCC8066-H , TPCC8067-H , TPCC8068-H , TPCC8073 , TPCC8074 , TPCC8076 , TPCC8084 , TPCC8093 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918