TPCC8065-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCC8065-H
Маркировка: 8065H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 18 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 9.9 nC
trⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 240 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0114 Ohm
Тип корпуса: TSON-ADVANCE
Аналог (замена) для TPCC8065-H
TPCC8065-H Datasheet (PDF)
tpcc8065-h.pdf
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tpcc8064-h.pdf
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tpcc8068-h.pdf
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tpcc8061-h.pdf
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tpcc8067-h.pdf
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tpcc8062-h.pdf
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tpcc8066-h.pdf
TPCC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8066-HTPCC8066-HTPCC8066-HTPCC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(
tpcc8069.pdf
TPCC8069MOSFETs Silicon N-channel MOS (U-MOS)TPCC8069TPCC8069TPCC8069TPCC80691. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VGS = 10 V)(3) Low l
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