TPCC8084 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8084
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 32 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 33 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 2.6 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm
Encapsulados: TSON-ADVANCE
Búsqueda de reemplazo de TPCC8084 MOSFET
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TPCC8084 datasheet
..1. Size:237K toshiba
tpcc8084.pdf 
TPCC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8084 TPCC8084 TPCC8084 TPCC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.2 m
8.1. Size:215K toshiba
tpcc8009.pdf
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V)
8.2. Size:227K toshiba
tpcc8007.pdf
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage
8.3. Size:176K toshiba
tpcc8002-h.pdf
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6
8.4. Size:239K toshiba
tpcc8076.pdf
TPCC8076 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8076 TPCC8076 TPCC8076 TPCC8076 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.7 m
8.5. Size:227K toshiba
tpcc8065-h.pdf
TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8065-H TPCC8065-H TPCC8065-H TPCC8065-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 4.3 nC (typ.) (
8.6. Size:351K toshiba
tpcc8064-h.pdf
TPCC8064-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8064-H TPCC8064-H TPCC8064-H TPCC8064-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 5.0 nC (typ.) (
8.7. Size:175K toshiba
tpcc8005-h.pdf
TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.2
8.8. Size:233K toshiba
tpcc8073.pdf
TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8073 TPCC8073 TPCC8073 TPCC8073 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
8.9. Size:278K toshiba
tpcc8008.pdf
TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8008 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.
8.10. Size:190K toshiba
tpcc8006-h.pdf
TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 6.5
8.11. Size:228K toshiba
tpcc8068-h.pdf
TPCC8068-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8068-H TPCC8068-H TPCC8068-H TPCC8068-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.3 nC (typ.) (
8.12. Size:258K toshiba
tpcc8061-h.pdf
TPCC8061-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8061-H TPCC8061-H TPCC8061-H TPCC8061-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.5 nC (typ.) (
8.13. Size:234K toshiba
tpcc8070.pdf
TPCC8070 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8070 TPCC8070 TPCC8070 TPCC8070 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 10.8 m (typ.) (VGS = 10 V) (3) Low
8.14. Size:217K toshiba
tpcc8003-h.pdf
TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 4.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 14.3
8.15. Size:176K toshiba
tpcc8001-h.pdf
TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6
8.16. Size:248K toshiba
tpcc8093.pdf
TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8093 TPCC8093 TPCC8093 TPCC8093 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 4.5 m (typ.) (VGS = 4.5 V) (3) Low leakage cu
8.17. Size:230K toshiba
tpcc8074.pdf
TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8074 TPCC8074 TPCC8074 TPCC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON)
8.18. Size:234K toshiba
tpcc8067-h.pdf
TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8067-H TPCC8067-H TPCC8067-H TPCC8067-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.9 nC (typ.) (
8.19. Size:415K toshiba
tpcc8062-h.pdf
TPCC8062-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8062-H TPCC8062-H TPCC8062-H TPCC8062-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 7.4 nC (typ.) (
8.20. Size:247K toshiba
tpcc8066-h.pdf
TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8066-H TPCC8066-H TPCC8066-H TPCC8066-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.2 nC (typ.) (
8.21. Size:237K toshiba
tpcc8069.pdf
TPCC8069 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8069 TPCC8069 TPCC8069 TPCC8069 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 6.5 m (typ.) (VGS = 10 V) (3) Low l
Otros transistores... TPCC8064-H, TPCC8065-H, TPCC8066-H, TPCC8067-H, TPCC8068-H, TPCC8073, TPCC8074, TPCC8076, STP65NF06, TPCC8093, TPCC8103, TPCC8104, TPCC8105, TPCC8131, TPCC8A01-H, TPCF8002, TPCF8003
