TPCC8084 Datasheet and Replacement
Type Designator: TPCC8084
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 21
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 2.6
nS
Cossⓘ -
Output Capacitance: 300
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067
Ohm
Package:
TSON-ADVANCE
-
MOSFET ⓘ Cross-Reference Search
TPCC8084 Datasheet (PDF)
..1. Size:237K toshiba
tpcc8084.pdf 
TPCC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8084TPCC8084TPCC8084TPCC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.2 m
8.1. Size:215K toshiba
tpcc8009.pdf
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8009 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
8.2. Size:227K toshiba
tpcc8007.pdf
TPCC8007MOSFETs Silicon N-channel MOS (U-MOS)TPCC8007TPCC8007TPCC8007TPCC80071. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V)(3) Low leakage
8.3. Size:176K toshiba
tpcc8002-h.pdf
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6
8.4. Size:239K toshiba
tpcc8076.pdf
TPCC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8076TPCC8076TPCC8076TPCC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.7 m
8.5. Size:227K toshiba
tpcc8065-h.pdf
TPCC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8065-HTPCC8065-HTPCC8065-HTPCC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(
8.6. Size:351K toshiba
tpcc8064-h.pdf
TPCC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8064-HTPCC8064-HTPCC8064-HTPCC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(
8.7. Size:175K toshiba
tpcc8005-h.pdf
TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2
8.8. Size:233K toshiba
tpcc8073.pdf
TPCC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8073TPCC8073TPCC8073TPCC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =
8.9. Size:278K toshiba
tpcc8008.pdf
TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8008 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.
8.10. Size:190K toshiba
tpcc8006-h.pdf
TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5
8.11. Size:228K toshiba
tpcc8068-h.pdf
TPCC8068-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8068-HTPCC8068-HTPCC8068-HTPCC8068-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.3 nC (typ.)(
8.12. Size:258K toshiba
tpcc8061-h.pdf
TPCC8061-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8061-HTPCC8061-HTPCC8061-HTPCC8061-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.5 nC (typ.)(
8.13. Size:234K toshiba
tpcc8070.pdf
TPCC8070MOSFETs Silicon N-channel MOS (U-MOS)TPCC8070TPCC8070TPCC8070TPCC80701. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 10.8 m (typ.) (VGS = 10 V)(3) Low
8.14. Size:217K toshiba
tpcc8003-h.pdf
TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3
8.15. Size:176K toshiba
tpcc8001-h.pdf
TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6
8.16. Size:248K toshiba
tpcc8093.pdf
TPCC8093MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8093TPCC8093TPCC8093TPCC80931. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 4.5 m (typ.) (VGS = 4.5 V)(3) Low leakage cu
8.17. Size:230K toshiba
tpcc8074.pdf
TPCC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8074TPCC8074TPCC8074TPCC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON)
8.18. Size:234K toshiba
tpcc8067-h.pdf
TPCC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8067-HTPCC8067-HTPCC8067-HTPCC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(
8.19. Size:415K toshiba
tpcc8062-h.pdf
TPCC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8062-HTPCC8062-HTPCC8062-HTPCC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 7.4 nC (typ.)(
8.20. Size:247K toshiba
tpcc8066-h.pdf
TPCC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8066-HTPCC8066-HTPCC8066-HTPCC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(
8.21. Size:237K toshiba
tpcc8069.pdf
TPCC8069MOSFETs Silicon N-channel MOS (U-MOS)TPCC8069TPCC8069TPCC8069TPCC80691. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VGS = 10 V)(3) Low l
Datasheet: TPCC8064-H
, TPCC8065-H
, TPCC8066-H
, TPCC8067-H
, TPCC8068-H
, TPCC8073
, TPCC8074
, TPCC8076
, IRFZ48N
, TPCC8093
, TPCC8103
, TPCC8104
, TPCC8105
, TPCC8131
, TPCC8A01-H
, TPCF8002
, TPCF8003
.
History: IPD50R500CE
| DMP3160L
| BUK9Y12-55B
| CEB740G
| AP9971GD
| WFF15N60
| STW70N60DM2
Keywords - TPCC8084 MOSFET datasheet
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