TPCC8A01-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8A01-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 2.2 nS
Cossⓘ - Capacitancia de salida: 380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0099 Ohm
Encapsulados: TSON-ADVANCE
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TPCC8A01-H datasheet
..1. Size:248K toshiba
tpcc8a01-h.pdf 
TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in a Schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 4.
9.1. Size:215K toshiba
tpcc8009.pdf
TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V)
9.2. Size:227K toshiba
tpcc8007.pdf
TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage
9.3. Size:234K toshiba
tpcc8131.pdf
TPCC8131 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8131 TPCC8131 TPCC8131 TPCC8131 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.5 m (typ.) (VGS = -10 V) (3) Low leakag
9.4. Size:176K toshiba
tpcc8002-h.pdf
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6
9.5. Size:239K toshiba
tpcc8076.pdf
TPCC8076 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8076 TPCC8076 TPCC8076 TPCC8076 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.7 m
9.6. Size:227K toshiba
tpcc8065-h.pdf
TPCC8065-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8065-H TPCC8065-H TPCC8065-H TPCC8065-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 4.3 nC (typ.) (
9.7. Size:351K toshiba
tpcc8064-h.pdf
TPCC8064-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8064-H TPCC8064-H TPCC8064-H TPCC8064-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 5.0 nC (typ.) (
9.8. Size:237K toshiba
tpcc8107.pdf
TPCC8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8107 TPCC8107 TPCC8107 TPCC8107 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 23.5 m (typ.) (VGS = -10 V) (3) Low
9.9. Size:175K toshiba
tpcc8005-h.pdf
TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.2
9.10. Size:234K toshiba
tpcc8106.pdf
TPCC8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8106 TPCC8106 TPCC8106 TPCC8106 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 9.5 m (typ.) (VGS = -10 V) (3) Low
9.11. Size:231K toshiba
tpcc8104.pdf
TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8104 TPCC8104 TPCC8104 TPCC8104 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (V
9.12. Size:223K toshiba
tpcc8102.pdf
TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8102 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 t
9.13. Size:233K toshiba
tpcc8073.pdf
TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8073 TPCC8073 TPCC8073 TPCC8073 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
9.14. Size:278K toshiba
tpcc8008.pdf
TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8008 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.
9.15. Size:190K toshiba
tpcc8006-h.pdf
TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 6.5
9.16. Size:228K toshiba
tpcc8068-h.pdf
TPCC8068-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8068-H TPCC8068-H TPCC8068-H TPCC8068-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.3 nC (typ.) (
9.17. Size:258K toshiba
tpcc8061-h.pdf
TPCC8061-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8061-H TPCC8061-H TPCC8061-H TPCC8061-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.5 nC (typ.) (
9.18. Size:234K toshiba
tpcc8070.pdf
TPCC8070 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8070 TPCC8070 TPCC8070 TPCC8070 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 10.8 m (typ.) (VGS = 10 V) (3) Low
9.19. Size:230K toshiba
tpcc8137.pdf
TPCC8137 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8137 TPCC8137 TPCC8137 TPCC8137 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V) (3) Low leakage current IDSS = -10 A (max) (VDS
9.20. Size:232K toshiba
tpcc8138.pdf
TPCC8138 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8138 TPCC8138 TPCC8138 TPCC8138 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V) (3) Low leakage current IDSS = -10 A (max) (VDS
9.21. Size:237K toshiba
tpcc8084.pdf
TPCC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8084 TPCC8084 TPCC8084 TPCC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.2 m
9.22. Size:217K toshiba
tpcc8003-h.pdf
TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 4.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 14.3
9.23. Size:176K toshiba
tpcc8001-h.pdf
TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 7.1 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6
9.24. Size:248K toshiba
tpcc8093.pdf
TPCC8093 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8093 TPCC8093 TPCC8093 TPCC8093 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 4.5 m (typ.) (VGS = 4.5 V) (3) Low leakage cu
9.25. Size:219K toshiba
tpcc8103.pdf
TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8103 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 9.4 m (typ.) (VGS = -10 V) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to
9.26. Size:230K toshiba
tpcc8074.pdf
TPCC8074 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCC8074 TPCC8074 TPCC8074 TPCC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON)
9.27. Size:234K toshiba
tpcc8067-h.pdf
TPCC8067-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8067-H TPCC8067-H TPCC8067-H TPCC8067-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.9 nC (typ.) (
9.28. Size:218K toshiba
tpcc8105.pdf
TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8105 Lithium Ion Battery Applications Unit mm Power Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 6.0 m (typ.)( VGS = -10 V) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode V
9.29. Size:415K toshiba
tpcc8062-h.pdf
TPCC8062-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8062-H TPCC8062-H TPCC8062-H TPCC8062-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 7.4 nC (typ.) (
9.30. Size:247K toshiba
tpcc8066-h.pdf
TPCC8066-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPCC8066-H TPCC8066-H TPCC8066-H TPCC8066-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 3.2 nC (typ.) (
9.31. Size:237K toshiba
tpcc8069.pdf
TPCC8069 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8069 TPCC8069 TPCC8069 TPCC8069 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 6.5 m (typ.) (VGS = 10 V) (3) Low l
9.32. Size:231K toshiba
tpcc8136.pdf
TPCC8136 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8136 TPCC8136 TPCC8136 TPCC8136 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 13 m (typ.) (VGS = -4.5 V) (3) Low leakage current
Otros transistores... TPCC8074, TPCC8076, TPCC8084, TPCC8093, TPCC8103, TPCC8104, TPCC8105, TPCC8131, IRLB3034, TPCF8002, TPCF8003, TPCF8004, TPCF8101, TPCF8105, TPCF8107, TPCF8108, TPCF8201
