TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in a Schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 4.

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8009 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

TPCC8007MOSFETs Silicon N-channel MOS (U-MOS)TPCC8007TPCC8007TPCC8007TPCC80071. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V)(3) Low leakage

TPCC8131MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8131TPCC8131TPCC8131TPCC81311. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (typ.) (VGS = -10 V)(3) Low leakag

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

TPCC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8076TPCC8076TPCC8076TPCC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.7 m

TPCC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8065-HTPCC8065-HTPCC8065-HTPCC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(

TPCC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8064-HTPCC8064-HTPCC8064-HTPCC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(

TPCC8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8107TPCC8107TPCC8107TPCC81071. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 23.5 m (typ.) (VGS = -10 V)(3) Low

TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8005-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2

TPCC8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8106TPCC8106TPCC8106TPCC81061. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = -10 V)(3) Low

TPCC8104MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8104TPCC8104TPCC8104TPCC81041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (V

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8102 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 t

TPCC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8073TPCC8073TPCC8073TPCC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCC8008 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 m (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5

TPCC8068-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8068-HTPCC8068-HTPCC8068-HTPCC8068-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.3 nC (typ.)(

TPCC8061-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8061-HTPCC8061-HTPCC8061-HTPCC8061-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.5 nC (typ.)(

TPCC8070MOSFETs Silicon N-channel MOS (U-MOS)TPCC8070TPCC8070TPCC8070TPCC80701. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 10.8 m (typ.) (VGS = 10 V)(3) Low

TPCC8137MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8137TPCC8137TPCC8137TPCC81371. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS

TPCC8138MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8138TPCC8138TPCC8138TPCC81381. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.0 m (typ.) (VGS = -4.5 V)(3) Low leakage current: IDSS = -10 A (max) (VDS

TPCC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8084TPCC8084TPCC8084TPCC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.2 m

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3

TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCC8001-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6

TPCC8093MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8093TPCC8093TPCC8093TPCC80931. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 4.5 m (typ.) (VGS = 4.5 V)(3) Low leakage cu

TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8103 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to

TPCC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPCC8074TPCC8074TPCC8074TPCC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switchings Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON)

TPCC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8067-HTPCC8067-HTPCC8067-HTPCC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(

TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8105 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 m (typ.)( VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: V

TPCC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8062-HTPCC8062-HTPCC8062-HTPCC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 7.4 nC (typ.)(

TPCC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCC8066-HTPCC8066-HTPCC8066-HTPCC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(

TPCC8069MOSFETs Silicon N-channel MOS (U-MOS)TPCC8069TPCC8069TPCC8069TPCC80691. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VGS = 10 V)(3) Low l

TPCC8136MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8136TPCC8136TPCC8136TPCC81361. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 13 m (typ.) (VGS = -4.5 V)(3) Low leakage current: