TPCC8A01-H. Аналоги и основные параметры

Наименование производителя: TPCC8A01-H

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.2 ns

Cossⓘ - Выходная емкость: 380 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0099 Ohm

Тип корпуса: TSON-ADVANCE

Аналог (замена) для TPCC8A01-H

- подборⓘ MOSFET транзистора по параметрам

 

TPCC8A01-H даташит

 ..1. Size:248K  toshiba
tpcc8a01-h.pdfpdf_icon

TPCC8A01-H

TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in a Schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 4.

 9.1. Size:215K  toshiba
tpcc8009.pdfpdf_icon

TPCC8A01-H

TPCC8009 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCC8009 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 5 m (typ.) ( VGS = 10 V) Low leakage current IDSS = 10 A (max) (VDS = 30 V)

 9.2. Size:227K  toshiba
tpcc8007.pdfpdf_icon

TPCC8A01-H

TPCC8007 MOSFETs Silicon N-channel MOS (U-MOS ) TPCC8007 TPCC8007 TPCC8007 TPCC8007 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.5 m (typ.) (VGS = 4.5 V) (3) Low leakage

 9.3. Size:234K  toshiba
tpcc8131.pdfpdf_icon

TPCC8A01-H

TPCC8131 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8131 TPCC8131 TPCC8131 TPCC8131 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.5 m (typ.) (VGS = -10 V) (3) Low leakag

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