TPCF8201 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCF8201
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 3 nS
Cossⓘ - Capacitancia de salida: 85 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
Encapsulados: VS8
Búsqueda de reemplazo de TPCF8201 MOSFET
- Selecciónⓘ de transistores por parámetros
TPCF8201 datasheet
..1. Size:220K toshiba
tpcf8201.pdf 
TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 5.4 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode Vth = 0.5 to 1.2 V (VDS
9.1. Size:238K toshiba
tpcf8305.pdf
TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage
9.2. Size:232K toshiba
tpcf8003.pdf
TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8003 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2
9.3. Size:264K toshiba
tpcf8104.pdf
TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V
9.4. Size:219K toshiba
tpcf8108.pdf
TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
9.5. Size:283K toshiba
tpcf8304.pdf
TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 60 m (typ.) High forward transfer admittance Yfs = 5.9 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement model Vth = -0.8 to -2.0 V,
9.6. Size:223K toshiba
tpcf8105.pdf
TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG
9.7. Size:71K toshiba
tpcf8a01.pdf
TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON resistance R = 38 m (typ.) DS (ON) High forward transfer admittance Y = 5.4 S (typ.) fs Low leakage current I = 10 A (max) (V = 20 V) DSS DS Enhancement-mod
9.8. Size:229K toshiba
tpcf8004.pdf
TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCF8004 TPCF8004 TPCF8004 TPCF8004 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 10 V) (3) Low leakage curr
9.9. Size:224K toshiba
tpcf8102.pdf
TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V
9.10. Size:252K toshiba
tpcf8101.pdf
TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -12 V) Enhancement model Vth = -0.5 to -1.2 V
9.11. Size:225K toshiba
tpcf8306.pdf
TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8306 TPCF8306 TPCF8306 TPCF8306 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -4.5 V) (3) Low leakage current
9.12. Size:180K toshiba
tpcf8301.pdf
TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Y = 4.7 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model Vth = -0.5 to
9.13. Size:101K toshiba
tpcf8303.pdf
TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 58 m (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model V = -0.45 to -
9.14. Size:228K toshiba
tpcf8107.pdf
TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8107 TPCF8107 TPCF8107 TPCF8107 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =
9.15. Size:229K toshiba
tpcf8002.pdf
TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance RDS (ON) = 16 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V
9.16. Size:295K toshiba
tpcf8103.pdf
TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement-model Vth = -0.5 to -1.2 V
9.17. Size:261K toshiba
tpcf8302.pdf
TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 44 m (typ.) High forward transfer admittance Yfs = 6.2 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V
9.18. Size:252K toshiba
tpcf8001.pdf
TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 8 S (typ.) Low leakage current IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (V
9.19. Size:312K toshiba
tpcf8402.pdf
TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications Unit mm DC-DC Converter Applications Low drain-source ON resistance P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance P Channel Yfs = 5.9 S (typ.)
9.20. Size:305K toshiba
tpcf8b01.pdf
TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7 S (typ.) Low leakage current IDSS =-10 A (max) (VDS = -20 V) Enhancement-model Vt
Otros transistores... TPCC8A01-H, TPCF8002, TPCF8003, TPCF8004, TPCF8101, TPCF8105, TPCF8107, TPCF8108, AOD4184A, TPCF8301, TPCF8304, TPCF8305, TPCF8402, TPCF8B01, TPCP8003-H, TPCP8004, TPCP8005-H
