TPCF8201 - описание и поиск аналогов

 ..1. Size:220K  toshiba
 tpcf8201.pdf 

TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 5.4 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode Vth = 0.5 to 1.2 V (VDS

 9.1. Size:238K  toshiba
 tpcf8305.pdf 

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage

 9.2. Size:232K  toshiba
 tpcf8003.pdf 

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8003 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2

 9.3. Size:264K  toshiba
 tpcf8104.pdf 

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V

 9.4. Size:219K  toshiba
 tpcf8108.pdf 

TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =

 9.5. Size:283K  toshiba
 tpcf8304.pdf 

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 60 m (typ.) High forward transfer admittance Yfs = 5.9 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement model Vth = -0.8 to -2.0 V,

 9.6. Size:223K  toshiba
 tpcf8105.pdf 

TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG

 9.7. Size:71K  toshiba
 tpcf8a01.pdf 

TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit mm Low drain-source ON resistance R = 38 m (typ.) DS (ON) High forward transfer admittance Y = 5.4 S (typ.) fs Low leakage current I = 10 A (max) (V = 20 V) DSS DS Enhancement-mod

 9.8. Size:229K  toshiba
 tpcf8004.pdf 

TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCF8004 TPCF8004 TPCF8004 TPCF8004 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 10 V) (3) Low leakage curr

 9.9. Size:224K  toshiba
 tpcf8102.pdf 

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V

 9.10. Size:252K  toshiba
 tpcf8101.pdf 

TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -12 V) Enhancement model Vth = -0.5 to -1.2 V

 9.11. Size:225K  toshiba
 tpcf8306.pdf 

TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8306 TPCF8306 TPCF8306 TPCF8306 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -4.5 V) (3) Low leakage current

 9.12. Size:180K  toshiba
 tpcf8301.pdf 

TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Y = 4.7 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model Vth = -0.5 to

 9.13. Size:101K  toshiba
 tpcf8303.pdf 

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 58 m (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model V = -0.45 to -

 9.14. Size:228K  toshiba
 tpcf8107.pdf 

TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8107 TPCF8107 TPCF8107 TPCF8107 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) =

 9.15. Size:229K  toshiba
 tpcf8002.pdf 

TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance RDS (ON) = 16 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V

 9.16. Size:295K  toshiba
 tpcf8103.pdf 

TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement-model Vth = -0.5 to -1.2 V

 9.17. Size:261K  toshiba
 tpcf8302.pdf 

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 44 m (typ.) High forward transfer admittance Yfs = 6.2 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V

 9.18. Size:252K  toshiba
 tpcf8001.pdf 

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 8 S (typ.) Low leakage current IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (V

 9.19. Size:312K  toshiba
 tpcf8402.pdf 

TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications Unit mm DC-DC Converter Applications Low drain-source ON resistance P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance P Channel Yfs = 5.9 S (typ.)

 9.20. Size:305K  toshiba
 tpcf8b01.pdf 

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 72 m (typ.) High forward transfer admittance Yfs = 4.7 S (typ.) Low leakage current IDSS =-10 A (max) (VDS = -20 V) Enhancement-model Vt