TPCF8201 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCF8201
Маркировка: F4A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.33 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7.5 nC
trⓘ - Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 85 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.049 Ohm
Тип корпуса: VS8
TPCF8201 Datasheet (PDF)
tpcf8201.pdf
TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS
tpcf8305.pdf
TPCF8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8305TPCF8305TPCF8305TPCF83051. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage
tpcf8003.pdf
TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCF8003 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2
tpcf8104.pdf
TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCF8104 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V
tpcf8108.pdf
TPCF8108MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8108TPCF8108TPCF8108TPCF81081. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =
tpcf8304.pdf
TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V,
tpcf8105.pdf
TPCF8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8105TPCF8105TPCF8105TPCF81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 24 m (typ.) (VG
tpcf8a01.pdf
TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R = 38 m (typ.) DS (ON) High forward transfer admittance: |Y | = 5.4 S (typ.) fs Low leakage current: I = 10 A (max) (V = 20 V) DSS DS Enhancement-mod
tpcf8004.pdf
TPCF8004MOSFETs Silicon N-Channel MOS (U-MOS)TPCF8004TPCF8004TPCF8004TPCF80041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 10 V)(3) Low leakage curr
tpcf8102.pdf
TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 24 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V
tpcf8101.pdf
TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement model: Vth = -0.5 to -1.2 V
tpcf8306.pdf
TPCF8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8306TPCF8306TPCF8306TPCF83061. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 90 m (typ.) (VGS = -4.5 V)(3) Low leakage current:
tpcf8301.pdf
TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Y | = 4.7 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: Vth = -0.5 to
tpcf8303.pdf
TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Y | = 6.0 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.45 to -
tpcf8107.pdf
TPCF8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8107TPCF8107TPCF8107TPCF81071. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =
tpcf8002.pdf
TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V
tpcf8103.pdf
TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V
tpcf8302.pdf
TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 44 m (typ.) High forward transfer admittance: |Yfs| = 6.2 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V
tpcf8001.pdf
TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (V
tpcf8402.pdf
TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Low drain-source ON resistance : P Channel RDS (ON) = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.)
tpcf8b01.pdf
TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 A (max) (VDS = -20 V) Enhancement-model: Vt
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918