TPCF8305 Todos los transistores

 

TPCF8305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCF8305
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.7 nS
   Cossⓘ - Capacitancia de salida: 108 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: VS8
 

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TPCF8305 Datasheet (PDF)

 ..1. Size:238K  toshiba
 tpcf8305.pdf pdf_icon

TPCF8305

TPCF8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8305TPCF8305TPCF8305TPCF83051. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 7.1. Size:283K  toshiba
 tpcf8304.pdf pdf_icon

TPCF8305

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V,

 7.2. Size:225K  toshiba
 tpcf8306.pdf pdf_icon

TPCF8305

TPCF8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8306TPCF8306TPCF8306TPCF83061. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 90 m (typ.) (VGS = -4.5 V)(3) Low leakage current:

 7.3. Size:180K  toshiba
 tpcf8301.pdf pdf_icon

TPCF8305

TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Y | = 4.7 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: Vth = -0.5 to

MOSTRAR MÁS

Otros transistores... TPCF8004 , TPCF8101 , TPCF8105 , TPCF8107 , TPCF8108 , TPCF8201 , TPCF8301 , TPCF8304 , 5N50 , TPCF8402 , TPCF8B01 , TPCP8003-H , TPCP8004 , TPCP8005-H , TPCP8006 , TPCP8007-H , TPCP8008-H .

History: N2500N | DH850N10I

 

 
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