Справочник MOSFET. TPCF8305

 

TPCF8305 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCF8305
   Маркировка: F5E
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.2 nC
   trⓘ - Время нарастания: 8.7 ns
   Cossⓘ - Выходная емкость: 108 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: VS8

 Аналог (замена) для TPCF8305

 

 

TPCF8305 Datasheet (PDF)

 ..1. Size:238K  toshiba
 tpcf8305.pdf

TPCF8305 TPCF8305

TPCF8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8305TPCF8305TPCF8305TPCF83051. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 7.1. Size:283K  toshiba
 tpcf8304.pdf

TPCF8305 TPCF8305

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V,

 7.2. Size:225K  toshiba
 tpcf8306.pdf

TPCF8305 TPCF8305

TPCF8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8306TPCF8306TPCF8306TPCF83061. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 90 m (typ.) (VGS = -4.5 V)(3) Low leakage current:

 7.3. Size:180K  toshiba
 tpcf8301.pdf

TPCF8305 TPCF8305

TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Y | = 4.7 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: Vth = -0.5 to

 7.4. Size:101K  toshiba
 tpcf8303.pdf

TPCF8305 TPCF8305

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Y | = 6.0 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.45 to -

 7.5. Size:261K  toshiba
 tpcf8302.pdf

TPCF8305 TPCF8305

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 44 m (typ.) High forward transfer admittance: |Yfs| = 6.2 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V

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