BUK545-100A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK545-100A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: SOT186
Búsqueda de reemplazo de BUK545-100A MOSFET
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BUK545-100A datasheet
buk545-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 13 12
buk545-200a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -200A -200B envelope. VDS Drain-source voltage 200 200 V The device is intended for use in ID Drain current (DC) 7.6 7
buk545-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched
buk545-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -60A -60B envelope. VDS Drain-source voltage 60 60 V The device is intended for use in ID Drain current (DC) 20 18 A Sw
Otros transistores... BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , 2SK3878 , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A .
History: BUK109-50GS | BUK436W-800B
History: BUK109-50GS | BUK436W-800B
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