BUK545-100A PDF and Equivalents Search

 

BUK545-100A Specs and Replacement

Type Designator: BUK545-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT186

BUK545-100A substitution

- MOSFET ⓘ Cross-Reference Search

 

BUK545-100A datasheet

 0.1. Size:56K  philips
 buk545-100a-b 1.pdf pdf_icon

BUK545-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 13 12 ... See More ⇒

 7.1. Size:56K  philips
 buk545-200a-b 1.pdf pdf_icon

BUK545-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -200A -200B envelope. VDS Drain-source voltage 200 200 V The device is intended for use in ID Drain current (DC) 7.6 7 ... See More ⇒

 7.2. Size:71K  philips
 buk545-60h 1.pdf pdf_icon

BUK545-100A

Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched... See More ⇒

 7.3. Size:57K  philips
 buk545-60a-b 1.pdf pdf_icon

BUK545-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -60A -60B envelope. VDS Drain-source voltage 60 60 V The device is intended for use in ID Drain current (DC) 20 18 A Sw... See More ⇒

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Detailed specifications: BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , 2SK3878 , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A .

History: FDMC8032L

Keywords - BUK545-100A MOSFET specs

 BUK545-100A cross reference
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