TPCP8008-H Todos los transistores

 

TPCP8008-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCP8008-H
   Código: 8008H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.84 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 2.4 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: PS8

 Búsqueda de reemplazo de MOSFET TPCP8008-H

 

TPCP8008-H Datasheet (PDF)

 ..1. Size:209K  toshiba
tpcp8008-h.pdf

TPCP8008-H
TPCP8008-H

TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-sour

 7.1. Size:189K  toshiba
tpcp8004.pdf

TPCP8008-H
TPCP8008-H

TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCP8004 Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge: Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance:

 7.2. Size:215K  toshiba
tpcp8006.pdf

TPCP8008-H
TPCP8008-H

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit: mm0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage curr

 7.3. Size:249K  toshiba
tpcp8003-h.pdf

TPCP8008-H
TPCP8008-H

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B0.05 M B0.65 Small gate charge:

 7.4. Size:211K  toshiba
tpcp8005-h.pdf

TPCP8008-H
TPCP8008-H

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M APortable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4B0.05 M B0.65 Small gate charge: QSW = 5.0 nC (typ.

 7.5. Size:181K  toshiba
tpcp8007-h.pdf

TPCP8008-H
TPCP8008-H

TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8007-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.)

 7.6. Size:227K  toshiba
tpcp8002.pdf

TPCP8008-H
TPCP8008-H

TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 Lead (Pb)-Free 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 7 m (typ.) High forward transfer admittance 0.475 1 4B:|Yfs| = 36 S

 7.7. Size:226K  toshiba
tpcp8009.pdf

TPCP8008-H
TPCP8008-H

TPCP8009MOSFETs Silicon N-channel MOS (U-MOS)TPCP8009TPCP8009TPCP8009TPCP80091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 9.6 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = 10 V)

 7.8. Size:39K  toshiba
tpcp8001-h.pdf

TPCP8008-H
TPCP8008-H

TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCP8001-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications M+0.05 A Small footprint due to small and thin package High speed switching 0.170.02B0.330.05 0.05M B

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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