TPCP8103-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCP8103-H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.84 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: PS8

Búsqueda de reemplazo de MOSFET TPCP8103-H

TPCP8103-H Datasheet (PDF)

..1. Size:266K toshiba
tpcp8103-h.pdf

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications CCFL Inverter Applications 0.475 1 4B Small footprint due to a small and thin package 0.05 M B0.652.90.1 High spe

7.1. Size:194K toshiba
tpcp8102.pdf

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:

7.2. Size:227K toshiba
tpcp8109.pdf

TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V

7.3. Size:230K toshiba
tpcp8105.pdf

TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5

7.4. Size:224K toshiba
tpcp8106.pdf

TPCP8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8106TPCP8106TPCP8106TPCP81061. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

7.5. Size:224K toshiba
tpcp8107.pdf

TPCP8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8107TPCP8107TPCP8107TPCP81071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 14.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 13.9 m (typ.) (VGS = -10

7.6. Size:223K toshiba
tpcp8101.pdf

TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance: |Yfs| = 14 S (typ.) Low l

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