TPCP8103-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCP8103-H
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.84 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6.5 ns
Cossⓘ - Выходная емкость: 165 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: PS8
- подбор MOSFET транзистора по параметрам
TPCP8103-H Datasheet (PDF)
tpcp8103-h.pdf

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications CCFL Inverter Applications 0.475 1 4B Small footprint due to a small and thin package 0.05 M B0.652.90.1 High spe
tpcp8102.pdf

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:
tpcp8109.pdf

TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V
tpcp8105.pdf

TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PMCXB1000UE | TSF5N65M | STK4N25 | FQP19N20L | IRF3707SPBF | HAT2053M | P2202CM
History: PMCXB1000UE | TSF5N65M | STK4N25 | FQP19N20L | IRF3707SPBF | HAT2053M | P2202CM



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