BUK545-100B Todos los transistores

Introduzca al menos 3 números o letras

BUK545-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK545-100B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: SOT186

Búsqueda de reemplazo de MOSFET BUK545-100B

 

BUK545-100B Datasheet (PDF)

1.1. buk545-100a-b 1.pdf Size:56K _philips

BUK545-100B
BUK545-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -100A -100B envelope. VDS Drain-source voltage 100 100 V The device is intended for use in ID Drain current (DC) 13 12 A

3.1. buk545-60a-b 1.pdf Size:57K _philips

BUK545-100B
BUK545-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -60A -60B envelope. VDS Drain-source voltage 60 60 V The device is intended for use in ID Drain current (DC) 20 18 A Switc

3.2. buk545-60h 1.pdf Size:71K _philips

BUK545-100B
BUK545-100B

Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Pt

3.3. buk545-200a-b 1.pdf Size:56K _philips

BUK545-100B
BUK545-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic full-pack BUK545 -200A -200B envelope. VDS Drain-source voltage 200 200 V The device is intended for use in ID Drain current (DC) 7.6 7 A

Otros transistores... BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , 75339P , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A .

 


BUK545-100B
  BUK545-100B
  BUK545-100B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

Introduzca al menos 1 números o letras