BUK545-100B Todos los transistores

 

BUK545-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK545-100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: SOT186
 

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BUK545-100B Datasheet (PDF)

 4.1. Size:56K  philips
 buk545-100a-b 1.pdf pdf_icon

BUK545-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 13 12

 7.1. Size:56K  philips
 buk545-200a-b 1.pdf pdf_icon

BUK545-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -200A -200Benvelope. VDS Drain-source voltage 200 200 VThe device is intended for use in ID Drain current (DC) 7.6 7

 7.2. Size:71K  philips
 buk545-60h 1.pdf pdf_icon

BUK545-100B

Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched

 7.3. Size:57K  philips
 buk545-60a-b 1.pdf pdf_icon

BUK545-100B

Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 20 18 ASw

MOSTRAR MÁS

Otros transistores... BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , 12N60 , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A .

 

 
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