BUK545-100B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK545-100B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: SOT186
- подбор MOSFET транзистора по параметрам
BUK545-100B Datasheet (PDF)
buk545-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK545-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -100A -100Benvelope. VDS Drain-source voltage 100 100 VThe device is intended for use in ID Drain current (DC) 13 12
buk545-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -200A -200Benvelope. VDS Drain-source voltage 200 200 VThe device is intended for use in ID Drain current (DC) 7.6 7
buk545-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK545-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched
buk545-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic full-pack BUK545 -60A -60Benvelope. VDS Drain-source voltage 60 60 VThe device is intended for use in ID Drain current (DC) 20 18 ASw
Другие MOSFET... BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , IRF1010E , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A .
History: MCH3484 | DMN30H4D0L
History: MCH3484 | DMN30H4D0L



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