TPCP8106 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPCP8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8106TPCP8106TPCP8106TPCP81061. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:

TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V

TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications CCFL Inverter Applications 0.475 1 4B Small footprint due to a small and thin package 0.05 M B0.652.90.1 High spe

TPCP8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8107TPCP8107TPCP8107TPCP81071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 14.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 13.9 m (typ.) (VGS = -10

TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance: |Yfs| = 14 S (typ.) Low l