All MOSFET. TPCP8106 Datasheet

 

TPCP8106 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPCP8106
   Marking Code: 8106
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: PS8

 TPCP8106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCP8106 Datasheet (PDF)

 ..1. Size:224K  toshiba
 tpcp8106.pdf

TPCP8106 TPCP8106

TPCP8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8106TPCP8106TPCP8106TPCP81061. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =

 7.1. Size:194K  toshiba
 tpcp8102.pdf

TPCP8106 TPCP8106

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:

 7.2. Size:227K  toshiba
 tpcp8109.pdf

TPCP8106 TPCP8106

TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V

 7.3. Size:230K  toshiba
 tpcp8105.pdf

TPCP8106 TPCP8106

TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5

 7.4. Size:266K  toshiba
 tpcp8103-h.pdf

TPCP8106 TPCP8106

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications CCFL Inverter Applications 0.475 1 4B Small footprint due to a small and thin package 0.05 M B0.652.90.1 High spe

 7.5. Size:224K  toshiba
 tpcp8107.pdf

TPCP8106 TPCP8106

TPCP8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8107TPCP8107TPCP8107TPCP81071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 14.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 13.9 m (typ.) (VGS = -10

 7.6. Size:223K  toshiba
 tpcp8101.pdf

TPCP8106 TPCP8106

TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance: |Yfs| = 14 S (typ.) Low l

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