TPCP8106 Specs and Replacement
Type Designator: TPCP8106
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: PS8
TPCP8106 substitution
- MOSFET ⓘ Cross-Reference Search
TPCP8106 datasheet
tpcp8106.pdf
TPCP8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8106 TPCP8106 TPCP8106 TPCP8106 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = ... See More ⇒
tpcp8102.pdf
TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 13.5 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current ... See More ⇒
tpcp8109.pdf
TPCP8109 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8109 TPCP8109 TPCP8109 TPCP8109 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 5.8 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 40.3 m (typ.) (VGS = -10 V... See More ⇒
tpcp8105.pdf
TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8105 TPCP8105 TPCP8105 TPCP8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.8 m (typ.) (VGS = -4.5... See More ⇒
Detailed specifications: TPCP8005-H, TPCP8006, TPCP8007-H, TPCP8008-H, TPCP8101, TPCP8102, TPCP8103-H, TPCP8105, IRF640, TPCP8203, TPCP8204, TPCP8205-H, TPCP8206, TPCP8303, TPCP8305, TPCP8306, TPCP8401
Keywords - TPCP8106 MOSFET specs
TPCP8106 cross reference
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TPCP8106 replacement
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