TPCP8203 Todos los transistores

 

TPCP8203 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCP8203
   Código: 8203
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: PS8
 
   - Selección ⓘ de transistores por parámetros

 

TPCP8203 Datasheet (PDF)

 ..1. Size:232K  toshiba
 tpcp8203.pdf pdf_icon

TPCP8203

TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC/DC Converters 0.05 M A8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance: |

 7.1. Size:250K  toshiba
 tpcp8204.pdf pdf_icon

TPCP8203

TPCP8204TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit: mm Small footprint due to small and thin package 0.330.05 Low drain-source ON resistance: RDS (ON) = 38 m (typ.) M A 0.058 5VGS=10V High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage

 7.2. Size:237K  toshiba
 tpcp8207.pdf pdf_icon

TPCP8203

TPCP8207MOSFETs Silicon N-channel MOS (U-MOS)TPCP8207TPCP8207TPCP8207TPCP82071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) =

 7.3. Size:242K  toshiba
 tpcp8201.pdf pdf_icon

TPCP8203

TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converter Applications 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4B 0.05 M B0.65:|Yfs| = 7.0 S

MOSTRAR MÁS

Otros transistores... TPCP8006 , TPCP8007-H , TPCP8008-H , TPCP8101 , TPCP8102 , TPCP8103-H , TPCP8105 , TPCP8106 , IRF1404 , TPCP8204 , TPCP8205-H , TPCP8206 , TPCP8303 , TPCP8305 , TPCP8306 , TPCP8401 , TPCP8404 .

 

 
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