TPCP8203 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC/DC Converters 0.05 M A8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance: |

TPCP8204TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit: mm Small footprint due to small and thin package 0.330.05 Low drain-source ON resistance: RDS (ON) = 38 m (typ.) M A 0.058 5VGS=10V High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage

TPCP8207MOSFETs Silicon N-channel MOS (U-MOS)TPCP8207TPCP8207TPCP8207TPCP82071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) =

TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converter Applications 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4B 0.05 M B0.65:|Yfs| = 7.0 S

TPCP8205-HMOSFETs Silicon N-Channel MOS (U-MOS)TPCP8205-HTPCP8205-HTPCP8205-HTPCP8205-H1. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Low drain-source on-resistance: RDS(ON) = 20 m

TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converters 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON-resistance: RDS(ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) 0.475 1 4B Low leakage current: IDSS = 1

TPCP8206MOSFETs Silicon N-Channel MOS (U-MOS)TPCP8206TPCP8206TPCP8206TPCP82061. Applications1. Applications1. Applications1. Applications Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 4.5 V)(3) Low leakage current: IDSS = 1