TPCP8203
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCP8203
Marking Code: 8203
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
PS8
TPCP8203
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCP8203
Datasheet (PDF)
..1. Size:232K toshiba
tpcp8203.pdf 
TPCP8203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCP8203 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC/DC Converters 0.05 M A8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 31 m (typ.) 0.475 1 4 High forward transfer admittance: |
7.1. Size:250K toshiba
tpcp8204.pdf
TPCP8204TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit: mm Small footprint due to small and thin package 0.330.05 Low drain-source ON resistance: RDS (ON) = 38 m (typ.) M A 0.058 5VGS=10V High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage
7.2. Size:237K toshiba
tpcp8207.pdf
TPCP8207MOSFETs Silicon N-channel MOS (U-MOS)TPCP8207TPCP8207TPCP8207TPCP82071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) =
7.3. Size:242K toshiba
tpcp8201.pdf
TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converter Applications 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4B 0.05 M B0.65:|Yfs| = 7.0 S
7.4. Size:233K toshiba
tpcp8205-h.pdf
TPCP8205-HMOSFETs Silicon N-Channel MOS (U-MOS)TPCP8205-HTPCP8205-HTPCP8205-HTPCP8205-H1. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Low drain-source on-resistance: RDS(ON) = 20 m
7.5. Size:230K toshiba
tpcp8202.pdf
TPCP8202 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) TPCP8202 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converters 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON-resistance: RDS(ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 20 S (typ.) 0.475 1 4B Low leakage current: IDSS = 1
7.6. Size:234K toshiba
tpcp8206.pdf
TPCP8206MOSFETs Silicon N-Channel MOS (U-MOS)TPCP8206TPCP8206TPCP8206TPCP82061. Applications1. Applications1. Applications1. Applications Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 4.5 V)(3) Low leakage current: IDSS = 1
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