TPCP8206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCP8206
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.6 nS
Cossⓘ - Capacitancia de salida: 144 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: PS8
Búsqueda de reemplazo de TPCP8206 MOSFET
TPCP8206 Datasheet (PDF)
tpcp8206.pdf

TPCP8206MOSFETs Silicon N-Channel MOS (U-MOS)TPCP8206TPCP8206TPCP8206TPCP82061. Applications1. Applications1. Applications1. Applications Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 4.5 V)(3) Low leakage current: IDSS = 1
tpcp8204.pdf

TPCP8204TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit: mm Small footprint due to small and thin package 0.330.05 Low drain-source ON resistance: RDS (ON) = 38 m (typ.) M A 0.058 5VGS=10V High forward transfer admittance:|Yfs| = 8 S (typ.) Low leakage
tpcp8207.pdf

TPCP8207MOSFETs Silicon N-channel MOS (U-MOS)TPCP8207TPCP8207TPCP8207TPCP82071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) =
tpcp8201.pdf

TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05DC-DC Converter Applications 0.05 M A8 5 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4B 0.05 M B0.65:|Yfs| = 7.0 S
Otros transistores... TPCP8101 , TPCP8102 , TPCP8103-H , TPCP8105 , TPCP8106 , TPCP8203 , TPCP8204 , TPCP8205-H , IRF630 , TPCP8303 , TPCP8305 , TPCP8306 , TPCP8401 , TPCP8404 , TPCP8405 , TPCP8406 , TPCP8A05-H .
History: NCE82H110D | RU2H50R | CHM8207JGP | IPD50R650CE | P1203BKA | KMB7D0N40QA | NCEP3045GU
History: NCE82H110D | RU2H50R | CHM8207JGP | IPD50R650CE | P1203BKA | KMB7D0N40QA | NCEP3045GU



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