TPCP8206 Specs and Replacement
Type Designator: TPCP8206
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.6 nS
Cossⓘ - Output Capacitance: 144 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: PS8
TPCP8206 substitution
- MOSFET ⓘ Cross-Reference Search
TPCP8206 datasheet
tpcp8206.pdf
TPCP8206 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCP8206 TPCP8206 TPCP8206 TPCP8206 1. Applications 1. Applications 1. Applications 1. Applications Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 4.5 V) (3) Low leakage current IDSS = 1... See More ⇒
tpcp8204.pdf
TPCP8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCP8204 Portable Equipment Applications Motor Drive Applications Unit mm Small footprint due to small and thin package 0.33 0.05 Low drain-source ON resistance RDS (ON) = 38 m (typ.) M A 0.05 8 5 VGS=10V High forward transfer admittance Yfs = 8 S (typ.) Low leakage... See More ⇒
tpcp8207.pdf
TPCP8207 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8207 TPCP8207 TPCP8207 TPCP8207 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Small gate charge QSW = 4.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = ... See More ⇒
tpcp8201.pdf
TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications Unit mm 0.33 0.05 DC-DC Converter Applications 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance 0.475 1 4 B 0.05 M B 0.65 Yfs = 7.0 S... See More ⇒
Detailed specifications: TPCP8101, TPCP8102, TPCP8103-H, TPCP8105, TPCP8106, TPCP8203, TPCP8204, TPCP8205-H, IRF640N, TPCP8303, TPCP8305, TPCP8306, TPCP8401, TPCP8404, TPCP8405, TPCP8406, TPCP8A05-H
Keywords - TPCP8206 MOSFET specs
TPCP8206 cross reference
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