TPCP8306 Todos los transistores

 

TPCP8306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCP8306
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.7 nS
   Cossⓘ - Capacitancia de salida: 108 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: PS8
     - Selección de transistores por parámetros

 

TPCP8306 Datasheet (PDF)

 ..1. Size:229K  toshiba
tpcp8306.pdf pdf_icon

TPCP8306

TPCP8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8306TPCP8306TPCP8306TPCP83061. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 7.1. Size:226K  toshiba
tpcp8305.pdf pdf_icon

TPCP8306

TPCP8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8305TPCP8305TPCP8305TPCP83051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VG

 7.2. Size:265K  toshiba
tpcp8302.pdf pdf_icon

TPCP8306

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance: |Yfs

 7.3. Size:221K  toshiba
tpcp8303.pdf pdf_icon

TPCP8306

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) 0.475 1 4 Low leakage current: IDSS = -10

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TPCP8305 | AON3806 | STB70NF03L-1 | SSG4394N | HUF75623P3 | IRFP231 | STS4DPF30L

 

 
Back to Top

 


 
.