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TPCP8306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCP8306
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.7 nS
   Cossⓘ - Capacitancia de salida: 108 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: PS8
 

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TPCP8306 Datasheet (PDF)

 ..1. Size:229K  toshiba
 tpcp8306.pdf pdf_icon

TPCP8306

TPCP8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8306TPCP8306TPCP8306TPCP83061. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 7.1. Size:226K  toshiba
 tpcp8305.pdf pdf_icon

TPCP8306

TPCP8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8305TPCP8305TPCP8305TPCP83051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VG

 7.2. Size:265K  toshiba
 tpcp8302.pdf pdf_icon

TPCP8306

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance: |Yfs

 7.3. Size:221K  toshiba
 tpcp8303.pdf pdf_icon

TPCP8306

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) 0.475 1 4 Low leakage current: IDSS = -10

MOSTRAR MÁS

Otros transistores... TPCP8105 , TPCP8106 , TPCP8203 , TPCP8204 , TPCP8205-H , TPCP8206 , TPCP8303 , TPCP8305 , AON6414A , TPCP8401 , TPCP8404 , TPCP8405 , TPCP8406 , TPCP8A05-H , TPCP8J01 , 2SJ200 , 2SJ201 .

History: 2N4119 | IRF7484Q | IXTY1N80 | SM3106NSU | AM6411P | AON6586 | BSC072N04LD

 

 
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