TPCP8306 PDF and Equivalents Search

 

TPCP8306 Specs and Replacement

Type Designator: TPCP8306

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.7 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: PS8

TPCP8306 substitution

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TPCP8306 datasheet

 ..1. Size:229K  toshiba
tpcp8306.pdf pdf_icon

TPCP8306

TPCP8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8306 TPCP8306 TPCP8306 TPCP8306 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage ... See More ⇒

 7.1. Size:226K  toshiba
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TPCP8306

TPCP8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8305 TPCP8305 TPCP8305 TPCP8305 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VG... See More ⇒

 7.2. Size:265K  toshiba
tpcp8302.pdf pdf_icon

TPCP8306

TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8302 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance Yfs... See More ⇒

 7.3. Size:221K  toshiba
tpcp8303.pdf pdf_icon

TPCP8306

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Low drain-source ON-resistance RDS(ON) = 41 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) 0.475 1 4 Low leakage current IDSS = -10 ... See More ⇒

Detailed specifications: TPCP8105 , TPCP8106 , TPCP8203 , TPCP8204 , TPCP8205-H , TPCP8206 , TPCP8303 , TPCP8305 , IRFB4227 , TPCP8401 , TPCP8404 , TPCP8405 , TPCP8406 , TPCP8A05-H , TPCP8J01 , 2SJ200 , 2SJ201 .

Keywords - TPCP8306 MOSFET specs

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