TPCP8306 Specs and Replacement
Type Designator: TPCP8306
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.7 nS
Cossⓘ - Output Capacitance: 108 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: PS8
TPCP8306 substitution
- MOSFET ⓘ Cross-Reference Search
TPCP8306 datasheet
tpcp8306.pdf
TPCP8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8306 TPCP8306 TPCP8306 TPCP8306 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage ... See More ⇒
tpcp8305.pdf
TPCP8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8305 TPCP8305 TPCP8305 TPCP8305 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 23 m (typ.) (VG... See More ⇒
tpcp8302.pdf
TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCP8302 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance Yfs... See More ⇒
tpcp8303.pdf
TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit mm Lithium Ion Battery Applications 0.33 0.05 Notebook PC Applications 0.05 M A 8 5 Portable Equipment Applications Low drain-source ON-resistance RDS(ON) = 41 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) 0.475 1 4 Low leakage current IDSS = -10 ... See More ⇒
Detailed specifications: TPCP8105 , TPCP8106 , TPCP8203 , TPCP8204 , TPCP8205-H , TPCP8206 , TPCP8303 , TPCP8305 , IRFB4227 , TPCP8401 , TPCP8404 , TPCP8405 , TPCP8406 , TPCP8A05-H , TPCP8J01 , 2SJ200 , 2SJ201 .
Keywords - TPCP8306 MOSFET specs
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