BUK552-100A Todos los transistores

 0.1. Size:56K  philips
 buk552-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK552 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

 7.1. Size:55K  philips
 buk552-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK552 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre

 9.1. Size:55K  philips
 buk555-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain

 9.2. Size:53K  philips
 buk556-60h 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 60 A automotive and general purpose Ptot Total p

 9.3. Size:60K  philips
 buk553-100b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

 9.4. Size:55K  philips
 buk555-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre

 9.5. Size:69K  philips
 buk553-48c 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 V The device is intended for use in ID Drain current (

 9.6. Size:54K  philips
 buk553-60a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre

 9.7. Size:56K  philips
 buk553-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

 9.8. Size:69K  philips
 buk555-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A Automotive applications, Switched Ptot Tota

 9.9. Size:63K  philips
 buk554-60h 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK554-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 39 A automotive and general purpose Ptot Total po

 9.10. Size:54K  philips
 buk555-100a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain

 9.11. Size:86K  philips
 buk555-200b.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain

 9.12. Size:53K  philips
 buk556-60a 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 50 A Switched Mode Power Supplies Ptot Total pow

 9.13. Size:91K  philips
 buk553-60a buk553-60b.pdf

 9.14. Size:234K  inchange semiconductor
 buk555-100.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK555-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE