BUK552-100A MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUK552-100A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT78

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BUK552-100A Datasheet (PDF)

0.1. Size:56K philips
buk552-100a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK552 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

7.1. Size:55K philips
buk552-60a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK552 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

9.1. Size:55K philips
buk555-200a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain

9.2. Size:53K philips
buk556-60h 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 60 Aautomotive and general purpose Ptot Total p

9.3. Size:60K philips
buk553-100b.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

9.4. Size:55K philips
buk555-60a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

9.5. Size:69K philips
buk553-48c 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 VThe device is intended for use in ID Drain current (

9.6. Size:54K philips
buk553-60a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

9.7. Size:56K philips
buk553-100a-b 1.pdf pdf_icon

9.8. Size:69K philips
buk555-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 AAutomotive applications, Switched Ptot Tota

9.9. Size:63K philips
buk554-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK554-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 39 Aautomotive and general purpose Ptot Total po

9.10. Size:54K philips
buk555-100a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

9.11. Size:86K philips
buk555-200b.pdf pdf_icon

9.12. Size:53K philips
buk556-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 50 ASwitched Mode Power Supplies Ptot Total pow

9.13. Size:91K philips
buk553-60a buk553-60b.pdf pdf_icon

9.14. Size:234K inchange semiconductor
buk555-100.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK555-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE

Datasheet: BUK465-200A , BUK466-200A , BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , AO4407 , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A .

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BUK552-100A MOSFET. Datasheet pdf. Equivalent

BUK552-100A Datasheet (PDF)

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