TPCP8406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPCP8406
   Código: 8406
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 13.7 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 142 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: PS8

Búsqueda de reemplazo de MOSFET TPCP8406

TPCP8406 Datasheet (PDF)

..1. Size:351K toshiba
tpcp8406.pdf

TPCP8406MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8406TPCP8406TPCP8406TPCP84061. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)

7.1. Size:286K toshiba
tpcp8404.pdf

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05 Low drain-source ON-resistance : P Channel RDS (ON) = 38 m(typ.) 0.05 M A8 5(VGS=-10V) N Channel RDS (ON) = 38 m(typ.) VGS=10V) High forward transfer admittance : P Channel |Yfs

7.2. Size:347K toshiba
tpcp8405.pdf

TPCP8405MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8405TPCP8405TPCP8405TPCP84051. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)

7.3. Size:317K toshiba
tpcp8403.pdf

TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans

7.4. Size:347K toshiba
tpcp8407.pdf

TPCP8407MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS )TPCP8407TPCP8407TPCP8407TPCP84071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low gate chargeN-channel MOSFET: QSW = 4.7 nC (typ.)P-channel MOSFET: QSW = 5.5 nC (typ.)(3) Lo

7.5. Size:279K toshiba
tpcp8401.pdf

TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS / -MOS ) TPCP8401 Switching Regulator Applications Load Switch Applications Unit: mm0.330.05 Lead(Pb)-Free 0.05 M A 8 5 Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin pack

7.6. Size:163K toshiba
tpcp8402.pdf

TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications Unit: mm DC-DC Converter Applications Low drain-source ON resistance : P Channel R = 60 m (typ.) DS (ON) N Channel R = 38 m (typ.) DS (ON) High forward transfer admittance : P Channel |Y | = 6.0

7.7. Size:207K kexin
tpcp8404.pdf

SMD Type MOSFETTransistorsSilicon P,N Channel MOSFETTPCP84040.330.05 Features 2-3V1G0.05 M A8 5 Low drain-source ON-resistance:P Channel RDS(ON) = 38m (typ.)(VGS=-10V)N Channel RDS(ON) = 38m (typ.)(VGS=10V) High forward transfer admittance:0.475 1 4B0.05 M B0.65P Channel |Yfs| = 7.3S (typ.)2.90.1AN Channel |Yfs| = 8S (typ.)0.80.05 Low leakage curr

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