All MOSFET. TPCP8406 Datasheet

 

TPCP8406 Datasheet and Replacement


   Type Designator: TPCP8406
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: PS8
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TPCP8406 Datasheet (PDF)

 ..1. Size:351K  toshiba
tpcp8406.pdf pdf_icon

TPCP8406

TPCP8406MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8406TPCP8406TPCP8406TPCP84061. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 33 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 m (typ.) (VGS = 10 V)

 7.1. Size:286K  toshiba
tpcp8404.pdf pdf_icon

TPCP8406

TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) TPCP8404 Portable Equipment Applications Motor Drive Applications Unit: mm0.330.05 Low drain-source ON-resistance : P Channel RDS (ON) = 38 m(typ.) 0.05 M A8 5(VGS=-10V) N Channel RDS (ON) = 38 m(typ.) VGS=10V) High forward transfer admittance : P Channel |Yfs

 7.2. Size:347K  toshiba
tpcp8405.pdf pdf_icon

TPCP8406

TPCP8405MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPCP8405TPCP8405TPCP8405TPCP84051. Applications1. Applications1. Applications1. Applications Cell Phones Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistanceP-channel RDS(ON) = 24 m (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 m (typ.) (VGS = 10 V)

 7.3. Size:317K  toshiba
tpcp8403.pdf pdf_icon

TPCP8406

TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications Unit: mmDC-DC Converter Applications 0.330.05 0.05 M A 8 5 Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 m (typ.) N Channel RDS (ON) = 31 m (typ.) High forward trans

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History: TK2P60D | IRFBG20

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