2SJ377 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo

2SJ377 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol

2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo

isc P-Channel MOSFET Transistor 2SJ374 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(